Publisher’s Note: “Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement” [AIP Advances 6, 095021 (2016)]

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Bibliographic Details
Published inAIP advances Vol. 6; no. 10; pp. 109903 - 109903-1
Main Authors Dong, Bin, Lin, Jie, Wang, Ning, Jiang, Ling-li, Liu, Zong-dai, Hu, Xiaoyan, Cheng, Kai, Yu, Hong-yu
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 01.10.2016
AIP Publishing LLC
Subjects
Aluminum gallium nitrides
High electron mobility transistors
Semiconductor devices
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ISSN:2158-3226
2158-3226
DOI:10.1063/1.4966916