Structure and electrical conductivity of selenium-ion-implanted CdSe films
We have studied the effect of annealing on the spectral and photoelectric properties of polycrystalline CdSe films produced by thermal evaporation and implanted with Se ions to doses from 5 × 10 15 to 5 × 10 16 cm −2 . The results demonstrate that, when cadmium vacancies and selenium interstitials a...
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Published in | Inorganic materials Vol. 46; no. 6; pp. 598 - 600 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Dordrecht
SP MAIK Nauka/Interperiodica
01.06.2010
|
Subjects | |
Online Access | Get full text |
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Summary: | We have studied the effect of annealing on the spectral and photoelectric properties of polycrystalline CdSe films produced by thermal evaporation and implanted with Se ions to doses from 5 × 10
15
to 5 × 10
16
cm
−2
. The results demonstrate that, when cadmium vacancies and selenium interstitials are major defects, annealing leads to the formation of microcrystalline two-phase layers during recrystallization, which have low
p
-type conductivity due to a shallow acceptor at
E
v
+ 0.04–0.05 eV, related to interstitial selenium. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0020-1685 1608-3172 |
DOI: | 10.1134/S0020168510060063 |