Structure and electrical conductivity of selenium-ion-implanted CdSe films

We have studied the effect of annealing on the spectral and photoelectric properties of polycrystalline CdSe films produced by thermal evaporation and implanted with Se ions to doses from 5 × 10 15 to 5 × 10 16 cm −2 . The results demonstrate that, when cadmium vacancies and selenium interstitials a...

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Bibliographic Details
Published inInorganic materials Vol. 46; no. 6; pp. 598 - 600
Main Authors Georgobiani, A. N., Levonovich, B. N., Avetisov, I. Kh
Format Journal Article
LanguageEnglish
Published Dordrecht SP MAIK Nauka/Interperiodica 01.06.2010
Subjects
Annealing
Cadmium selenides
Chemistry
Chemistry and Materials Science
Evaporation
Industrial Chemistry/Chemical Engineering
Inorganic Chemistry
Intermetallics
Interstitials
Materials Science
Resistivity
Selenium
Spectra
CdSe Film
Cadmium Selenide
Shallow Acceptor
Metal Vacancy
Chalcogen
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Summary:We have studied the effect of annealing on the spectral and photoelectric properties of polycrystalline CdSe films produced by thermal evaporation and implanted with Se ions to doses from 5 × 10 15 to 5 × 10 16 cm −2 . The results demonstrate that, when cadmium vacancies and selenium interstitials are major defects, annealing leads to the formation of microcrystalline two-phase layers during recrystallization, which have low p -type conductivity due to a shallow acceptor at E v + 0.04–0.05 eV, related to interstitial selenium.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0020-1685
1608-3172
DOI:10.1134/S0020168510060063