Piezotronics-enabled performance enhancement in ZnONR/n-MoS2/i-MoS2/p-Si photovoltaics

• Published in: Journal of computational electronics Vol. 24; no. 4; p. 103
• Main Authors: Rathnakannan, K., Parasuraman, R.
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.08.2025; Springer Nature B.V
• Subjects: Efficiency; Electrical Engineering; Energy bands; Energy harvesting; Engineering; Heterostructures; Mathematical and Computational Engineering; Mathematical and Computational Physics; Mechanical Engineering; Molybdenum disulfide; Nanorods; Optical and Electronic Materials; Performance enhancement; Photoelectricity; Photovoltaic cells; Quantum efficiency; Sensors; Solar cells; Solar energy; Theoretical; Thickness; Zinc oxide; n-MoS; Piezo-photoelectric; PCE; ZnO NR
• ISSN: 1569-8025; 1572-8137
• DOI: 10.1007/s10825-025-02347-w

This study explores the impact of the piezotronic effect on the performance of a ZnO nanorod/n-MoS 2 /i-MoS 2 /p-Si photovoltaic nano-heterostructure for achieving high-efficiency energy harvesting. We aimed to optimize the thickness of each layer in the piezo-photoelectric physical model to improve the J–V characteristics and energy band alignment. We found that a thickness of 5 nm for n-MoS 2 and 100 nm for ZnO NR, and the doping concentration led to the highest photoconversion efficiency of 28.08%. This configuration generated piezocharges at the ZnO/MoS 2 interfaces under applied strain ranging from − 1% to 1. This structure has potential for developing high-efficiency solar cells.