Graphene metrology and devices

• Published in: International journal of materials research Vol. 101; no. 2; pp. 175 - 181
• Main Authors: Diebold, Alain C., Nelson, Florence
• Format: Journal Article
• Language: English
• Published: De Gruyter 01.02.2010
• Subjects: Graphene; Hall effect; Metrology; Raman; TEM
• ISSN: 1862-5282; 2195-8556
• DOI: 10.3139/146.110263

The unusual electronic properties of graphene make it a prime candidate material for extending nanoelectronics and designing new types of switches. Graphene's unusual properties are a result of the unusual band structure associated with the hexagonal bonding pattern and the electron/hole transport through the pi orbitals. Graphene samples are frequently more than one layer, or few-layer graphene, and the change in electronic properties with each layer depends on the stacking configuration and the rotational misorientation between the layers. Transport measurements of single layer graphene (SLG) show that graphene exhibits the quantum Hall effect. In addition, Berry Phase corrections to carrier transport measurements are now widely recognized. Because graphene is a single layer of carbon atoms, it is difficult to find, manipulate, and measure. We review the status of physical and electrical characterization of graphene and discuss the remaining challenges. We discuss results from optical microscopy, transmission electron microscopy, low energy electron microscopy, nano-Raman, and several scanned probe methods. Issues such as determination of the number of layers of graphene and rotational stacking misorientation are emphasized.