Polarization‐Modulated Multi‐Mode Optoelectronic Synaptic Transistor for Sensing‐Memory‐Logic Computing and Optical Wireless Communication

• Published in: Advanced functional materials Vol. 35; no. 28
• Main Authors: Ci, Wenjuan, Wang, Peng, Xue, Wuhong, Liu, Tianqi, Qu, Jingyuan, Xu, Xiaohong
• Format: Journal Article
• Language: English
• Published: Hoboken Wiley Subscription Services, Inc 01.07.2025
• Subjects: Artificial intelligence; ferroelectric heterojunction; Ferroelectric materials; Ferroelectricity; Heterojunctions; Learning; Logic circuits; Machine vision; Man-machine interfaces; Modulation; Morse code; neuromorphic visual synaptic transistor; non‐volatile memory; optical fidelity wireless encrypted communication function; Optical memory (data storage); Optical wireless; Optoelectronics; Transistors; Vision systems; Wireless communications
• ISSN: 1616-301X; 1616-3028
• DOI: 10.1002/adfm.202424926

Neuromorphic machine vision has attracted much attention in the field of artificial intelligence in the post‐Moore era. However, current strategies still suffer from limited modulation, single function, and complex device structure. Here, the integration of sensing, memory, logic computing, and optical wireless communication is realized in a single 2D van der Waals α‐In2Se3/SnS2 ferroelectric heterojunction field‐effect transistor. The device exhibits excellent nonvolatile memory performances including a large memory window (≈76 V), excellent endurance (>800 cycles), and good retention time (>104 s). The device can also emulate synaptic behaviors well such as short‐term to long‐term memory transitions, experiential learning, and associative learning. And the reconfigurable logic gates (AND, OR) can be implemented by controlling electrical and optical inputs. In addition, the nonvolatile output current triggered by optical pulse sequences can express the international English alphabet Morse code (A‐Z), which is expected to be used in the field of optical wireless communication for human–machine interfaces. This work emphasizes that 2D ferroelectric heterojunctions have the advantages of efficient modulation and high function integration, which have great potential for application in the development of future neuromorphic vision systems. A robust vdW α‐In2Se3/SnS2 ferroelectric heterojunction device with multi‐degree‐of‐freedom modulation and rich functionality is proposed. The height of the built‐in potential barrier at the α‐In2Se3/SnS2 junction is controllably modulated by the gate voltage and light inducing ferroelectric polarization reversal, which enables excellent non‐volatile memory, synaptic plasticity simulation, logic computing, and wireless optical communication function based on Morse code.