High Temperature Oxidation of Ground Silicon Carbide Ceramics

• Published in: Transactions of the Japan Society of Mechanical Engineers Series A Vol. 59; no. 566; pp. 2292 - 2296
• Main Authors: Kanematsu, Wataru, Miyake, Takushi, Morikawa, Hisashi, Kubo, Katsushi
• Format: Journal Article
• Language: English; Japanese
• Published: The Japan Society of Mechanical Engineers 1993
• Subjects: Affected Layer; Brittle Fracture; Ceramics; Corrosion; Oxidation; SIMS (Secondary Ion Mass Spectrometer)
• ISSN: 0387-5008; 1884-8338
• DOI: 10.1299/kikaia.59.2292

The relationship between oxygen penetration depth into ground silicon carbide ceramics during oxidation and the extent of the affected layer has been studied. The penetration depth was deter-mined by measuring oxygen profile using the SIMS technique. The depths of ground ceramics oxidized at 1200 and 1500°C were expressed as the function of the maximum grain depth of cut g which is related to the depth of median crack in grinding. The penetration depth was smaller than the crack size. The increase in oxidation time hardly affected the penetration depth at 1200°C. It is suggested that the oxide film prevents further oxygen penetration and that the oxygen penetration has little effect on the strength at elevated temperatures.