Photoelectric Generation Coefficient of B‐Gallium Oxide during Exposure to High‐Energy Ionizing Radiation

• Published in: Physica status solidi. A, Applications and materials science Vol. 219; no. 6
• Main Authors: Goodman, Kevin, McHenry, Sam, Titus, Jeff, Cooper, Robert, Ghadi, Hemant, Ringel, Steve, Nomoto, Kazuki, Li, Wenshen, Bossev, Dobrin P., Jena, Debdeep, Xing, Huili Grace, Gadlage, Matthew J., Halstead, Matthew R.
• Format: Journal Article
• Language: English
• Published: Weinheim Wiley Subscription Services, Inc 01.03.2022
• Subjects: Coefficients; Epitaxial growth; gallium oxide; Gallium oxides; Ionizing radiation; Photoelectricity; photogeneration coefficients; Radiation; Radiation dosage; Schottky diodes; Semiconductor materials
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.202100700

For utilization in environments where radiation causes concern, a material's photogeneration coefficient proves essential for device designers. To extract this parameter for gallium oxide, which exhibits higher breakdown voltage characteristics compared with other commonly used semiconductor materials, making it desirable for high‐power applications, Schottky diodes receive high‐dose‐rate radiation from an electron linear accelerator. Monitoring photogenerated charge versus dose rate reveals a photogeneration coefficient of 2.4 × 1015 pairs (cm−3‐rad(Si)−1) for epitaxially grown β‐phase gallium oxide. Ga2O3 exhibits higher breakdown voltages than commonly used semiconductors making it desirable for high‐power applications. While wide bandgap materials hold promise for use in high‐energy ionizing radiation environments, designers must predict photo‐generated currents created within these environments. To extract gallium oxide's photo‐generation coefficient, Schottky diodes received high dose‐rate radiation from a linear accelerator revealing a value 100× that of silicon.