A Pseudo‐Junction Barrier Schottky Diode in p‐GaN/AlGaN/GaN High Electron Mobility Transistor Epitaxial Layers

• Published in: Physica status solidi. A, Applications and materials science Vol. 221; no. 13
• Main Authors: Sriramadasu, Krishna Sai, Hsin, Yue-Ming
• Format: Journal Article
• Language: English
• Published: Weinheim Wiley Subscription Services, Inc 01.07.2024
• Subjects: AlGaN/GaN HEMT; Aluminum gallium nitrides; Electric potential; Electron gas; Epitaxial layers; Epitaxy; Figure of merit; Gallium nitrides; GaN diodes; high breakdown voltage; High electron mobility transistors; junction barrier Schottky diodes; p-GaN pillars; Schottky diodes; Semiconductor devices; Voltage
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.202300540

This work investigates a pseudo‐junction barrier Schottky (pseudo‐JBS) diode that is created by placing an AlGaN/GaN Schottky diode in parallel with a p‐GaN junction on the same epitaxial p‐GaN gate AlGaN/GaN high electron mobility transistor (HEMT) wafer. This pseudo‐JBS diode employs the two‐dimentional electron gas to increase the operation current, thus reducing the on‐resistance with high blocking voltage. The fabricated pseudo‐JBS diode with anode‐to‐cathode lengths (LAC) of 10 μm shows a turn‐on voltage of 1.05 V, a minimum specific on‐resistance (RON,MIN) of 2.53 mΩ cm2, and blocking voltage of 1112 V yielding an excellent Baliga's figure of merit of 488.7 MW cm−2 on the same epitaxial p‐GaN/AlGaN/GaN HEMT wafer. This study provides a promising substitute for Schottky barrier diodes without requiring extra p‐GaN layer design. This study presents a novel pseudo‐junction barrier Schottky diode, merging an AlGaN/GaN Schottky diode with a p‐GaN junction on a p‐GaN gate AlGaN/GaN high electron mobility transistor wafer. Leveraging the 2D electron gas enhances operational current, reduces on‐resistance, and achieves an 1112 V blocking voltage. This diode offers a promising Schottky barrier diode alternative, obviating the need for extra p‐GaN layer design.