High-Efficiency Screen-Printed p-Si Interdigitated Back Contact Cells: Fabrication and Analytical Characterization

In this paper, we report on the fabrication and analytical characterization of the screen-printed p-Si interdigitated back contact (IBC) cells with the conversion efficiency of 20.08%, with open-circuit voltage of 645 mV, short-circuit current density of 40.15 mA/cm 2 , and fill factor of 77.51%. Th...

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Bibliographic Details
Published inIEEE journal of photovoltaics Vol. 7; no. 5; pp. 1284 - 1291
Main Authors Hsin, Pi-Yu, Peng, Yin-Wei, Gan, Jon-Yiew
Format Journal Article
LanguageEnglish
Published IEEE 01.09.2017
Subjects
Conductivity
Fabrication
Interdigitated back contact (IBC)
Laser ablation
p-type
Photovoltaic cells
Resistance
screen printed
silicon solar cell
Surface emitting lasers
Surface treatment
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Summary:In this paper, we report on the fabrication and analytical characterization of the screen-printed p-Si interdigitated back contact (IBC) cells with the conversion efficiency of 20.08%, with open-circuit voltage of 645 mV, short-circuit current density of 40.15 mA/cm 2 , and fill factor of 77.51%. The cell performance has also been confirmed with the analytical calculation based on the electrical properties measured. It also shows that, with the proper emitter design, the open-circuit voltage of 680 mV and conversion efficiency of 22% are readily attainable for the screen-printed p-Si IBC cell. Compared with the screen-printed IBC cells, the passivated emitter and rear "contact" cell may perform equivalently well, provided that any improvement on S eff of the front surface does not compromise the light absorption and emitter resistance of the cell.
ISSN:2156-3381
2156-3403
DOI:10.1109/JPHOTOV.2017.2719582