Effect of oxygen partial pressure on the electrical and optical properties of highly (200) oriented p-type Ni1-xO films by DC sputtering

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Bibliographic Details
Published inJournal of materials science Vol. 42; no. 14; pp. 5766 - 5772
Main Authors NANDY, Suman, SAHA, Biswajit, MITRA, Manoj K, CHATTOPADHYAY, K. K
Format Journal Article
LanguageEnglish
Published Heidelberg Springer 01.07.2007
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in multilayers, nanoscale materials and structures
Exact sciences and technology
Nanocrystalline materials
Nanocrystals and nanoparticles
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
Physics
Atomic force microscopy
Transparency
Electrical conductivity
Vacancies
Scanning capacitance microscopy
XRD
Preferred orientation
Deposition process
Thin films
Partial pressure
Transition elements
Optical properties
P type conductivity
Sputter deposition
Nanocrystal
Nickel oxide
X-ray photoelectron spectra
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ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-006-1153-x