Theory and Practice of MOS Processing Techniques-1973

Current industrial practice and theory applicable to the fabrication of low-voltage p-channel metal-oxide-semiconductor (PMOS) devices is summarized. An extensive bibliography and design parameter graphs are presented.

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Bibliographic Details
Published inIEEE transactions on manufacturing technology Vol. 2; no. 2; pp. 37 - 49
Main Authors Kmeta, W., Nadan, J.
Format Journal Article
LanguageEnglish
Published IEEE 01.12.1973
Subjects
Cleaning
Etching
Fabrication
Lithography
Manufacturing industries
MOS devices
Pulp manufacturing
Resists
Silicon
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Summary:Current industrial practice and theory applicable to the fabrication of low-voltage p-channel metal-oxide-semiconductor (PMOS) devices is summarized. An extensive bibliography and design parameter graphs are presented.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0046-838X
1558-3074
DOI:10.1109/TMFT.1973.1135507