Theory and Practice of MOS Processing Techniques-1973
Current industrial practice and theory applicable to the fabrication of low-voltage p-channel metal-oxide-semiconductor (PMOS) devices is summarized. An extensive bibliography and design parameter graphs are presented.
Saved in:
Published in | IEEE transactions on manufacturing technology Vol. 2; no. 2; pp. 37 - 49 |
---|---|
Main Authors | , |
Format | Journal Article |
Language | English |
Published |
IEEE
01.12.1973
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | Current industrial practice and theory applicable to the fabrication of low-voltage p-channel metal-oxide-semiconductor (PMOS) devices is summarized. An extensive bibliography and design parameter graphs are presented. |
---|---|
Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0046-838X 1558-3074 |
DOI: | 10.1109/TMFT.1973.1135507 |