Validity of Calibrated Photoluminescence Lifetime Measurements of Crystalline Silicon Wafers for Arbitrary Lifetime and Injection Ranges

• Published in: IEEE journal of photovoltaics Vol. 3; no. 1; pp. 381 - 386
• Main Authors: Herlufsen, S., Hinken, D., Offer, M., Schmidt, J., Bothe, K.
• Format: Journal Article
• Language: English
• Published: IEEE 01.01.2013
• Subjects: Calibration; carrier lifetime; Charge carrier density; Charge carrier lifetime; crystalline silicon wafers; Density measurement; imaging; photoconductance (PC); Photoluminescence; photoluminescence (PL); Photonics; Silicon
• ISSN: 2156-3381; 2156-3403
• DOI: 10.1109/JPHOTOV.2012.2218794

We investigate the validity of calibrated photoluminescence lifetime measurements of crystalline silicon wafers for arbitrary lifetime and injection ranges. Absolute lifetime images are obtained from steady-state photoluminescence measurements by relating the photoluminescence signal to the excess carrier density. Since the luminescence signal is expected to be related to the integral of the depth distribution of the excess carrier density, an adequate calibration of the luminescence signal requires a secondary method which yields the integral of the depth distribution of the excess carrier density in absolute units. In this paper, we investigate the applicability of steady-state photoconductance measurements for the calibration of the photoluminescence signal. We derive a generalized relation linking the photoluminescence signal with the excess carrier density, considering the impact of an inhomogeneous carrier concentration profile. We experimentally verify the impact of the carrier distribution on the photoluminescence calibration by investigating two silicon wafers with different electronic bulk properties. Finally, we propose an iterative correction procedure reducing the deviations due to an inhomogeneous carrier density profile of calibrated photoluminescence-based lifetime measurements significantly.