Improved Field Effect Mobility in Si-Face 4H-SiC MOSFETs with a Deposited SiNx Interface Layer

The SiO2/SiC interface quality has a significant effect on the performance of 4H-SiC MOS devices. The introduction of nitrogen to the SiO2/SiC interface is a well-known method for reducing the interface state density (Dit). In this study, we introduced nitrogen to the SiO2/SiC interface by forming S...

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Bibliographic Details
Published inMaterials science forum Vol. 963; pp. 469 - 472
Main Authors Okumura, Hajime, Okamoto, Mitsuo, Tawara, Tae, Harada, Shinsuke, Iijima, Miwako, Araoka, Tuyoshi, Iwahashi, Yohei, Kumazawa, Teruaki, Kimura, Hiroshi, Hamada, Kimimori, Fujikake, Shinji
Format Journal Article
LanguageEnglish
Published Pfaffikon Trans Tech Publications Ltd 19.07.2019
Subjects
Atomic layer epitaxy
MOS devices
MOSFETs
Silicon carbide
Silicon dioxide
Thickness
Field Effect Mobility
MOSFET
ALD
Interface State Density
SiNx
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Summary:The SiO2/SiC interface quality has a significant effect on the performance of 4H-SiC MOS devices. The introduction of nitrogen to the SiO2/SiC interface is a well-known method for reducing the interface state density (Dit). In this study, we introduced nitrogen to the SiO2/SiC interface by forming SiNx films using atomic layer deposition (ALD) and thus improved the interface quality. O2 annealing with a SiNx interface layer of optimal thickness enhanced the field effect mobility.
Bibliography:Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.963.469