Catalytic Growth of β-Ga2O3 Nanowires by Arc Discharge

Monoclinic gallium oxide nanowires are prepared here by arc discharge of GaN powder in the presence of a small amount of transition metal catalyst. The nanowires are characterized by X‐ray diffraction, energy dispersive X‐ray spectroscopy, and Raman spectroscopy, and evidence as to the mechanism of...

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Published inAdvanced materials (Weinheim) Vol. 12; no. 10; pp. 746 - 750
Main Authors Choi, Y. C., Kim, W. S., Park, Y. S., Lee, S. M., Bae, D. J., Lee, Y. H., Park, G.-S., Choi, W. B., Lee, N. S., Kim, J. M.
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag GmbH 01.05.2000
WILEY‐VCH Verlag GmbH
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Summary:Monoclinic gallium oxide nanowires are prepared here by arc discharge of GaN powder in the presence of a small amount of transition metal catalyst. The nanowires are characterized by X‐ray diffraction, energy dispersive X‐ray spectroscopy, and Raman spectroscopy, and evidence as to the mechanism of their formation (shown in the Figure) is obtained by high‐resolution transmission electron microscopy.
Bibliography:istex:AE854CFD7A5458501D3A02189438D7DE059DCF13
ark:/67375/WNG-V4SGS0F7-P
ArticleID:ADMA746
ISSN:0935-9648
1521-4095
DOI:10.1002/(SICI)1521-4095(200005)12:10<746::AID-ADMA746>3.0.CO;2-N