Investigation of Carbon Inclusions in SiC Crystals Grown by PVT Method

The carbon inclusions in SiC bulk crystals were studied by using optical microscope. The carbon inclusions were classified into three types, namely Type Ⅰ (100~1000 μm), Type Ⅱ (20~50 μm), Type Ⅲ (~5 μm) carbon inclusions based on their different morphologies. In addition, the evolution of these thr...

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Bibliographic Details
Published inMaterials science forum Vol. 1004; pp. 20 - 25
Main Authors Chen, Xiu Fang, Xu, Xian Gang, Yang, Xiang Long, Xie, Xue Jian, Liu, Duo, Liu, Xin Tong, Yu, Jin Ying, Hu, Xiao Bo
Format Journal Article
LanguageEnglish
Published Pfaffikon Trans Tech Publications Ltd 28.07.2020
Subjects
Carbon
Crystal growth
Crystals
Inclusions
Morphology
Optical microscopes
Formation Mechanism
PVT Growth
Morphology
Distribution
Carbon Inclusion
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Summary:The carbon inclusions in SiC bulk crystals were studied by using optical microscope. The carbon inclusions were classified into three types, namely Type Ⅰ (100~1000 μm), Type Ⅱ (20~50 μm), Type Ⅲ (~5 μm) carbon inclusions based on their different morphologies. In addition, the evolution of these three type carbon inclusions with crystal growth process was traced. It was found that the number of Type Ⅰ and Type Ⅱ carbon inclusions showed declined tendency with crystal growth, while the number of Type Ⅲ carbon inclusions exhibited less dependence on crystal growth. Furthermore, the formation mechanism of carbon inclusions was clarified. This study would give out a better understanding of carbon inclusions, thus contribute to reducing or eliminating carbon inclusions in SiC crystals.
Bibliography:Selected, peer-reviewed papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.1004.20