Energy Consumption, Conversion, and Transfer in Nanometric Field-Effect Transistors (FET) Used in Readout Electronics at Cryogenic Temperatures

The energy consumed by electron devices such as field-effect-transistors (FET) in an integrated circuit is mostly used to process different electrical signals. However, a fraction of that energy is also converted into heat that gets transferred throughout the integrated circuit and modifies the loca...

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Bibliographic Details
Published inJournal of low temperature physics Vol. 199; no. 1-2; pp. 171 - 181
Main Authors López-López, O., Martínez, I., Cabrera, A., Gutiérrez-D, E. A., Ferrusca, D., Durini, D., De la Hidalga-Wade, F. J., Velazquez, M., Huerta, O., Kruth, A., Degenhardt, C., Artanov, A., van Waasen, S.
Format Journal Article
LanguageEnglish
Published New York Springer US 01.04.2020
Springer Nature B.V
Subjects
Characterization and Evaluation of Materials
Charge transport
Condensed Matter Physics
Cryogenic temperature
Current carriers
Energy consumption
Field effect transistors
Heat
Integrated circuits
Low temperature physics
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Semiconductor devices
Signal processing
Temperature dependence
Thermodynamic properties
Transistors
Transport properties
FET
Quantum
3.1 K
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Summary:The energy consumed by electron devices such as field-effect-transistors (FET) in an integrated circuit is mostly used to process different electrical signals. However, a fraction of that energy is also converted into heat that gets transferred throughout the integrated circuit and modifies the local temperature. The modification of the local temperature, which is interpreted as a self-heating mechanism, is a function of different charge carrier scattering mechanisms, the characteristic energy relaxation times for charge carriers, the heat carrier mechanisms, the geometry of the FET, the volume of the integrated circuit, and the composed thermal properties of the integrated circuit and the system package. Besides all those dependencies, the charge and heat transport properties are temperature dependent. All these features make the electrothermodynamic analysis and modeling of low-power cryogenic electron devices a compulsory need. In this work, we introduce an analysis based on experimental results obtained from characterizing FET test structures in the temperature range between 300 K and down to 3.1 K.
ISSN:0022-2291
1573-7357
DOI:10.1007/s10909-020-02340-6