The effect of tellurium diffusion from an n-GaSb:Te substrate on the properties of GaInAsSb solid solutions grown from lead-containing melt

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Bibliographic Details
Published in	Semiconductors (Woodbury, N.Y.) Vol. 39; no. 3; pp. 308 - 312
Main Authors	Voronina, T. I., Lagunova, T. S., Lipaev, A. F., Kunitsyna, E. V., Parkhomenko, Ya. A., Sipovskaya, M. A., Yakovlev, Yu. P.
Format	Journal Article
Language	English
Published	01.03.2005
Online Access	Get full text

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ISSN:	1063-7826 1090-6479
DOI:	10.1134/1.1882792