The effects of MoO3 addition on microwave dielectric properties of Bi6B10O24 ceramics for ULTCC applications

Microwave ceramic with low‐sintering temperature is one of the most significant classes of materials to realize the multifunction and miniaturization of portable devices. In this paper, Bi 6 B 10 O 24 ceramics using the solid-state reaction method are prepared with MoO 3 addition, to achieve both lo...

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Bibliographic Details
Published inJournal of materials science. Materials in electronics Vol. 35; no. 9; p. 624
Main Authors Xia, Xiaoyan, Dai, Ying, Sun, Siqi, Chen, Wen, Zhang, Feng, Pei, Xinmei
Format Journal Article
LanguageEnglish
Published New York Springer US 01.03.2024
Springer Nature B.V
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Summary:Microwave ceramic with low‐sintering temperature is one of the most significant classes of materials to realize the multifunction and miniaturization of portable devices. In this paper, Bi 6 B 10 O 24 ceramics using the solid-state reaction method are prepared with MoO 3 addition, to achieve both low-temperature sintering and excellent microwave dielectric properties. It is demonstrated that MoO 3 diffuses into the lattice of Bi 6 B 10 O 24 to form a solid solution. The higher quality factor (Q ×  f ) of the ceramic is successfully obtained and the temperature coefficient of resonant frequency (τ f ) is adjusted to near zero at the same time without much change in the dielectric constant ( ε r ) due to the Mo 6+ incorporation. Compared to Bi 6 B 10 O 24 ceramics without addition, the optimum properties of ε r  = 13.9, Q ×  f  = 37,000 GHz, τ f  = − 20 ppm/°C are achieved for Bi 6 B 10 O 24 ceramics containing 19 mol% MoO 3 . The ceramics are potential candidates for ultra-low temperature co-fired ceramics (ULTCC) applications in wireless communication systems.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-024-12342-9