A multi-energy level agnostic simulation approach to defect generation

•Multi-energy level agnostic approach describes defects generation during time-dependent dielectric breakdown.•Defect generation is both fluence and energy-carrier-driven.•Considering the bond strength distribution, the accepted power-law trend for defect generation is naturally obtained by Monte Ca...

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Bibliographic Details
Published inSolid-state electronics Vol. 184; p. 108056
Main Authors Vici, Andrea, Degraeve, Robin, Kaczer, Ben, Franco, Jacopo, Van Beek, Simon, De Wolf, Ingrid
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.10.2021
Subjects
Defects
MC simulations
Power-law
TDDB
TDDB
Power-law
MC simulations
Defects
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Summary:•Multi-energy level agnostic approach describes defects generation during time-dependent dielectric breakdown.•Defect generation is both fluence and energy-carrier-driven.•Considering the bond strength distribution, the accepted power-law trend for defect generation is naturally obtained by Monte Carlo simulations.•Low-frequency AC time to-breakdown increased compared to DC. Defect generation during time-dependent dielectric breakdown stress is investigated by a multi-energy level agnostic model. Monte Carlo simulations show that the characteristic power-law increase of the generated defects with stress time is readily obtained when considering distributed bond strengths. DC and AC unipolar simulations show the proportionality between the time-to-breakdown and the fluence and energy of the injected carriers. These results are consistent with the experimental observations of a fluence and energy-driven process in thin oxides.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2021.108056