Variation in Structural Properties and Cation Distribution with Zinc Addition in Cobalt Ferrites

Samples of Co 1– x Zn x Fe 2 O 4 ( x  = 0.2, 0.4, 0.6 and 0.8) were prepared using the typical wet chemical co-precipitation process. The samples were then sintered at 600°C and 800°C for 3 h in air. The structure of the material was investigated by x-ray diffraction (XRD) and Rietveld refinement, a...

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Bibliographic Details
Published inJournal of electronic materials Vol. 53; no. 2; pp. 866 - 880
Main Authors Nasrin, Shamima, Hossen, M. Moazzam, Chowdhury, F.-U.- Z., Hoque, S. Manjura
Format Journal Article
LanguageEnglish
Published New York Springer US 01.02.2024
Springer Nature B.V
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Summary:Samples of Co 1– x Zn x Fe 2 O 4 ( x  = 0.2, 0.4, 0.6 and 0.8) were prepared using the typical wet chemical co-precipitation process. The samples were then sintered at 600°C and 800°C for 3 h in air. The structure of the material was investigated by x-ray diffraction (XRD) and Rietveld refinement, and a single-phase spinel cubic structure was confirmed by XRD. The size and shape of the material were evaluated by transmission electron microscopy (TEM). The selected area electron diffraction (SAED) pattern revealed distinct planes of the system. Investigation of the Fourier transform infrared (FTIR) spectra confirmed the successful uniform coating. The transformation of relaxations was revealed by Mössbauer spectroscopy. Changes in saturation magnetization and remanent magnetization were observed using a vibrating sample magnetometer. The lowest coercivity value verified the soft nature of the ferrite material. The allocation of cations according to the change in composition was studied with the help of Mössbauer spectroscopy. The transition from ferromagnetic to paramagnetic behavior was also revealed. The real and imaginary parts of the complex permeability were computed from frequencies of 1 kHz to 120 MHz using an impedance analyzer. It was observed that the constant value up to a higher-frequency range makes the material suitable for storage device applications.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-023-10836-6