Near-Infrared Photoluminescence from ZnIn2S4 Layered Single Crystals

This study presents investigation of the photoluminescence (PL) properties of ZnIn 2 S 4 single crystals. The PL emission characteristics were performed across a temperature spectrum spanning from 5 to 300 K. The PL emission maxima were observed in the infrared region at a wavelength of 725 nm (1.71...

Full description

Saved in:
Bibliographic Details
Published inPhysics of the solid state Vol. 67; no. 6; pp. 429 - 432
Main Authors Asadullayeva, S. G., Jahangirli, Z. A., Musayev, M. A., Eyyubov, Q. Y., Abiyev, A. S.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.06.2025
Springer Nature B.V
Subjects
Ambient temperature
Conduction bands
Crystal defects
Emission
Photoluminescence
Physics
Physics and Astronomy
Single crystals
Solid State Physics
Valence band
PLE
color coordinates
photoluminescence
band gap
donor and acceptor levels
Online AccessGet full text

Cover

More Information
Summary:This study presents investigation of the photoluminescence (PL) properties of ZnIn 2 S 4 single crystals. The PL emission characteristics were performed across a temperature spectrum spanning from 5 to 300 K. The PL emission maxima were observed in the infrared region at a wavelength of 725 nm (1.71 eV). At lower temperatures, this peak undergoes a blue shift, moving towards higher energies. At 5 K, the peak shifted by 40 nm, being observed at 685 nm (1.81 eV). At ambient temperature, the photoluminescence excitation (PLE) analysis of ZnIn 2 S 4 revealed distinct spectral maxima at 2.75 eV (450 nm) and 2.33 eV (530 nm), corresponding to electronic transitions from the valence band to the conduction band, and from defect states to the conduction band, respectively.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
ISSN:1063-7834
1090-6460
DOI:10.1134/S1063783425601067