Polymer-derived heteroatoms-doped porous NCNTs@C particles for microwave absorption with a broad absorption bandwidth and low filling ratio

Polymer-derived heteroatoms-doped porous NCNTs@C particles were prepared via a coprecipitation and heat-treat method using poly (phthalazinone ether nitrile ketone) (PPENK) resin and nitrogen-doped carbon nanotubes (NCNTs) as raw materials. The formation mechanism of pore structure was explored in t...

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Published inJournal of materials science. Materials in electronics Vol. 35; no. 12; p. 835
Main Authors Wang, Chenghao, Zhang, Ya, Zong, Lishuai, Liu, Qian, Zeng, Wenguang, Guo, Yujie, Zhang, Jiangjiang, Wang, Jinyan, Jian, Xigao
Format Journal Article
LanguageEnglish
Published New York Springer US 01.04.2024
Springer Nature B.V
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Summary:Polymer-derived heteroatoms-doped porous NCNTs@C particles were prepared via a coprecipitation and heat-treat method using poly (phthalazinone ether nitrile ketone) (PPENK) resin and nitrogen-doped carbon nanotubes (NCNTs) as raw materials. The formation mechanism of pore structure was explored in that PPENK resin deposited on the surface of NCNTs skeleton as continuous coatings and formed stable porous morphology. NCNTs@C inherited the porous morphology of precursors and the microstructure and composition of NCNTs@C absorbers could be adjusted by relative content and annealing temperature. The influence of average pore diameters on microwave absorption performance was investigated in detail. When the filling ratio was 15 wt%, the paraffin-based NC900 achieved the largest EAB value of 7.1 GHz (10.9–18.0 GHz) when the thickness was just 1.8 mm. NC900 implied multiple dielectric loss mechanisms of conductivity loss, dipole polarization and relaxation, interface polarization and relaxation, and multiple reflection and scattering. This work was the first to develop a simple strategy of utilizing polymer resin to construct porous microwave absorber with a broad absorption bandwidth and low filling ratio, and prepared a significant candidate for potential applications.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-024-12373-2