Effect of Etching Time to Tune Magnetoresistance Between Positive and Negative Values in p-Type Silicon Nanowires

• Published in: Journal of electronic materials Vol. 48; no. 12; pp. 7813 - 7818
• Main Authors: Ben Abdelaziz, B., Radaoui, M., Ben Fredj, A., Romdhane, S., Ben Alaya, C., Bouaïcha, M., Bouchriha, H.
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.12.2019; Springer Nature B.V
• Subjects: Aluminum; Characterization and Evaluation of Materials; Chemical etching; Chemistry and Materials Science; Electric potential; Electronics and Microelectronics; Etching; Instrumentation; Magnetoresistance; Magnetoresistivity; Materials Science; Nanowires; Optical and Electronic Materials; Organic chemistry; Silicon; Solid State Physics; Voltage; huge magnetoresistance; Silicon nanowires; type silicon
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-019-07615-7

Silicon nanowires (SiNWs) are formed by metal - assisted chemical etching of crystalline p -type silicon, in a mixture of aqueous HF and AgNO 3 chemical solutions. The magnetic field effects on the current of Ag/SiNWs/Si/Al structures have been studied. At room temperature, magnetoresistance (MR) measurements revealed positive and negative MR depending on the etching time and on the applied voltage. Huge positive MR of about 1200% has been observed at the low field. The negative MR is attributed to the weak localization effect, while the positive one is related to the ohmic regime, where holes control the current. The MR effect depends on the applied voltage and on the SiNWs length. The huge MR effect on SiNWs can be exploited in magnetic-field sensor devices.