Growth, characterization and DNA sensing properties of PrFe0.6Ni0.4O3 thin film

• Published in: Journal of materials science. Materials in electronics Vol. 34; no. 9; p. 814
• Main Authors: Bhat, Mohd Asif, Rana, Pooja, Mir, Feroz A., Ahmad, Peerzada A., ullah, Faheem, Rather, Mudassir H.
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.03.2023; Springer Nature B.V
• Subjects: Absorption spectra; Atomic force microscopy; Banded structure; Characterization and Evaluation of Materials; Chemistry and Materials Science; Current voltage characteristics; Epitaxial growth; Ferroelectricity; Materials Science; Optical and Electronic Materials; Pulsed laser deposition; Pulsed lasers; Scanning electron microscopy; Substrates; Thin films; X-ray diffraction
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-023-10220-4

In this study, PrFe 0.6 Ni 0.4 O 3 thin film was synthesized on LaAlO 3 (LAO) substrate by pulsed laser deposition (PLD) technique. The current film was characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman, Ultraviolet–Visible (UV–Vis.) spectroscopy, dielectric, and I–V measurements. The XRD analysis revealed that the understudy film is epitaxially grown with (00l) orientation. This film retains orthorhombic structure with p bnm space group. The AFM shows micro hill like structures and the SEM reveals the smooth morphology with some pits within the scanned areas. The Raman study carried out on this material describes various modes and are classified according to orthorhombic structure. From UV–Vis study, the current film shows absorption bands in ultraviolet region. The band gap (E g ) analysis carried out by Tauc plot shows indirect allowed transition. The E g was found to be around 3.5 eV. The dielectric study reveals the lower value of dielectric constant at high frequency. The frequency-dependent voltage–capacitance/loss study predicts ferroelectric nature of this film. Further the dielectric response of the current film behaves according to universal dielectric response (UDR) model. In addition to this current film was also subjected to I–V characteristic measurements. From this I–V response, it was observed that this film shows semiconducting behavior. Besides this the current film also demonstrates DNA sensing properties. Based on these properties, this material could be used as a sensing material.