CuInS/ZnS quantum dots-sensitized solar cells by introducing ZnS passivation layer

• Published in: Journal of materials science. Materials in electronics Vol. 34; no. 28; p. 1968
• Main Authors: Ebaid, Amira. Sh, El-Hamalawy, Ahmed A., ElKholy, Meawad M., Ebrahim, Shaker, El Nady, Jehan
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.10.2023; Springer Nature B.V
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Current density; Efficiency; Electrical measurement; Electron microscopes; Materials Science; Open circuit voltage; Optical and Electronic Materials; Optimization; Passivity; Photoluminescence; Photovoltaic cells; Quantum dots; Solar cells; Zinc sulfide
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-023-11387-6

Quantum dots (QDs) sensitized solar cells (QDSSCs) are among the promising choices of the third-generation technology to overcome the depletion of fossil fuel and energy demand. This study is dedicated to formulate CuInS/ZnS QDs as a light harvesting material for QDSSCs and to improve its efficiency. The sensitization time effect was studied, and the efficiency was improved by introducing ZnS as a passivation layer at optimum sensitization time using successive ionic layer absorption and reaction SILAR technique. The characterization of the synthesized QDs was achieved using UV–visible spectroscopy, photoluminescence, energy dispersive X-ray (EDX), X-ray diffraction (XRD), transmission electron microscope (TEM) and scanning electron microscope (SEM). Current density–voltage measurements of the fabricated QDSSCs were measured in the potential range of − 0.5 to 1.2 V. The optimal performance of the formulated QDSSCs with 5 days of sensitization time and 13 cycle of ZnS passivation layer had short-current density (J sc ), open circuit voltage (V oc ), fill factor (FF) and efficiency of 29.57 mA/cm 2 , 0.54 V, 0.27 and 4.42%, respectively.