Characterization of Defect Formation during Ni Silicidation for CMOS Device Application

Extended abstract of a paper presented at Microscopy and Microanalysis 2005 in Honolulu, Hawaii, USA, July 31--August 4, 2005

Saved in:
Bibliographic Details
Published inMicroscopy and microanalysis Vol. 11; no. S02; pp. 2096 - 2097
Main Authors Ko, K-S, Crank, S, Chen, P, Yue, D, Lavangkul, S, Mogul, H, Siddiqui, S, Bonifield, T
Format Journal Article
LanguageEnglish
Published New York, USA Cambridge University Press 01.08.2005
Oxford University Press
Subjects
Semiconductors
Online AccessGet full text

Cover

More Information
Summary:Extended abstract of a paper presented at Microscopy and Microanalysis 2005 in Honolulu, Hawaii, USA, July 31--August 4, 2005
ISSN:1431-9276
1435-8115
DOI:10.1017/S1431927605509632