Effect of the built-in electric field on optical and electrical properties of AlGaAs/InGaAs/GaAs P-HEMT nanoheterostructures

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 45; no. 5; pp. 657 - 662
• Main Authors: Khabibullin, R. A., Vasil’evskii, I. S., Galiev, G. B., Klimov, E. A., Ponomarev, D. S., Gladkov, V. P., Kulbachinskii, V. A., Klochkov, A. N., Uzeeva, N. A.
• Format: Journal Article
• Language: English
• Published: Dordrecht SP MAIK Nauka/Interperiodica 01.05.2011; Springer
• Subjects: ALUMINIUM ARSENIDES; Analysis; ELECTRIC FIELDS; Electric properties; ELECTRICAL PROPERTIES; ELECTRON MOBILITY; Electrons; GALLIUM ARSENIDES; INDIUM ARSENIDES; Magnetic Materials; Magnetism; MATERIALS SCIENCE; PEAKS; PHOTOLUMINESCENCE; Physics; Physics and Astronomy; Physics of Semiconductor Devices; QUANTUM WELLS; SPECTRA; SURFACES; Electric Field Increase; Size Quantization Level; Barrier Layer Thickness; GaAs; Quantum Well
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782611050162

This study is concerned with the photoluminescence spectra and electrical parameters of AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistor (P-HEMT) structures with a quantum well grown at different depths L b with respect to the surface. The samples are produced so as to make the concentration of electrons in the quantum well unchanged, as the barrier layer thickness L b is reduced. It is established that the photoluminescence spectra of all of the samples exhibit peaks at the photon energies ħ ω = 1.28−1.30 and 1.35–1.38 eV. The ratio between the intensities of these peaks increases as L b is decreased. Calculations of the band structure show that variations in the spectra are due to the fact that the built-in electric field increases as the quantum well is set closer to the surface.