Luminescence spectroscopy of ion implanted AlN bulk single crystal

• Published in: Journal of semiconductors Vol. 30; no. 8; pp. 31 - 33
• Main Author: 李巍巍 赵有文 董志远 杨俊 胡炜杰 客建红 黄艳 高振华
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.08.2009
• Subjects: 损害赔偿; 晶体生长; 氮化铝; 注入; 离子光谱; 铝单晶; 阴极发光; 高温退火
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/30/8/083002

High concentrations of Si and Zn were implanted into （0001） AlN bulk crystal grown by the self-seeded physical vapor transport （PVT） method. Cathode luminescence （CL） and photoluminescence （PL） spectroscopy were used to investigate the defects and properties of the implanted AlN. PL spectra of the implanted AlN are dominated by a broad near-band luminescence peak between 200 and 254 nm. After high temperature annealing, implantation induced lattice damages are recovered and the PL intensity increases significantly, suggesting that the implanted impurity Si and Zn occupy lattice site of Al. CL results imply that a 457 nm peak is Al vacancy related. Resistance of the AlN samples is still very high after annealing, indicating a low electrical activation efficiency of the impurity in AlN single crystal.