A 17–26.5 GHz 42.5 dBm broadband and highly efficient gallium nitride power amplifier design

• Published in: Frontiers of information technology & electronic engineering Vol. 23; no. 2; pp. 346 - 350
• Main Authors: Li, Ming, Li, Zhiqun, Zheng, Quan, Lin, Lanfeng, Tao, Hongqi
• Format: Journal Article
• Language: English
• Published: Hangzhou Zhejiang University Press 01.02.2022; Springer Nature B.V; Institute of RF-&OE-ICs,Southeast University,Nanjing 210096,China; Science and Technology on Monolithic Integrated and Modules Laboratory,Nanjing Electronic Devices Institute,Nanjing 210016,China%Institute of RF-&OE-ICs,Southeast University,Nanjing 210096,China; Engineering Research Center of RF-ICs and RF-Systems,Ministry of Education,Nanjing 210096,China%Science and Technology on Monolithic Integrated and Modules Laboratory,Nanjing Electronic Devices Institute,Nanjing 210016,China
• Subjects: Amplifier design; Broadband; Communications Engineering; Computer Hardware; Computer Science; Computer Systems Organization and Communication Networks; Correspondence; Efficiency; Electrical Engineering; Electronics and Microelectronics; Gallium nitrides; Input output; Instrumentation; Networks; Power amplifiers; Radar systems; Transistors; K波段; 氮化镓 (GaN); 宽带; 功率放大器; 高效率
• ISSN: 2095-9184; 2095-9230
• DOI: 10.1631/FITEE.2000513

摘要提出一种在微波频段具有宽带、 高效率的氮化镓 (GaN)功率放大器. 该功率放大器采用0.15 μm栅长GaN-HEMT工艺, 其工作频段可以覆盖整个K频段, 即17–26.5 GHz. 为获得更好的输出功率和功率附加效率 (PAE), 根据晶体管的性能, 设计了最优前后级驱动比和最佳晶体管尺寸, 并采用宽带低损耗电路拓扑结构, 实现宽带高效率设计. 同时, 将谐波控制结构巧妙地集成到驱动级匹配电路中, 提升高频效率, 确保整个频段内获得较高功率附加效率. 该功率放大器采用三级放大拓扑结构, 在连续波条件下, 测试结果表明, 在17–26.5 GHz频带范围内饱和输出功率超过42.5 dBm, 平均PAE为30%, 在19.8 GHz时PAE达到最大, 为32.1%, 输出功率平坦度优于1.0 dB. 该芯片结构紧凑, 面积仅为4.2 mm×3.0 mm, 可广泛应用于收发组件、 无线通信、 电子测量仪器等领域.