(Invited) Giant Magnetoelectric Effect in Thin Film Composites

Si cantilevers with thin film ME 2-2 composites consisting of AlN as the piezoelectric phase and of amorphous magnetostrictive Metglas as the magnetostrictive phase show an extremely high ME coefficient of up to 1800 V/cmOe at mechanical resonance and about 3 V/cmOe out of resonance at a magnetic bi...

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Bibliographic Details
Published inECS transactions Vol. 50; no. 10; pp. 231 - 234
Main Authors Lage, Enno, Piorra, Andre, Kirchhof, Christine, Yarar, Erdem, Meyners, Dirk, Quandt, Eckhard
Format Journal Article
LanguageEnglish
Published The Electrochemical Society, Inc 15.03.2013
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Summary:Si cantilevers with thin film ME 2-2 composites consisting of AlN as the piezoelectric phase and of amorphous magnetostrictive Metglas as the magnetostrictive phase show an extremely high ME coefficient of up to 1800 V/cmOe at mechanical resonance and about 3 V/cmOe out of resonance at a magnetic bias field of 6 Oe. Using an exchanged biased multilayer of the sequence Ta/Cu/Mn70Ir30/Metglas as the magnetostrictive phase the coefficient is approximately reduced by a factor of 2.5 (comparing the same resonance frequencies) but no magnetic bias field is needed any more.
ISSN:1938-5862
1938-6737
DOI:10.1149/05010.0231ecst