Effect of O2 flow rate in the annealing process on metal–insulator transition of vanadium oxide thin films

• Published in: Journal of materials science. Materials in electronics Vol. 26; no. 9; pp. 6920 - 6925
• Main Authors: Li, Na, Hu, Ming, Liang, Ji-Ran, Liu, Xing, Wu, Mai-Jun
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.09.2015; Springer Nature B.V
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Materials Science; Optical and Electronic Materials; Hysteresis Width; Sapphire Substrate; Vanadium Dioxide; Vanadium Oxide; Phase Transition Temperature
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-015-3310-y

Vanadium oxide (VO x ) thin films were fabricated on the sapphire substrates by sputtering deposition and subsequent rapid-thermal-annealing (RTA) process. The effect of O 2 flow rate on the crystal structure, surface morphology and phase transition property of thin films was studied. The results indicated that VO x thin films were polycrystalline structures and consisted of irregular blocky-shaped grains. As the O 2 flow rate increased from 3 to 4.5 slpm, the oxidation was enhanced and the grain size decreased gradually. In addition, when we increased O 2 flow rate, phase transition amplitude increased from 5.4 to 117 and the phase transition temperature decreased from 50.45 °C to 45.37 °C. The hysteresis width almost increased as O 2 flow rate increased. More interesting, we found that the value of d lg R □ / d T became big at high temperature which could be attributed to the phase transition and the variation trend of difference was in line with the phase transition amplitude. So, it could be concluded that O 2 flow rate in the RTA process played a significant role in the properties of VO x thin films.