Thermal Migration of Melted Zones over the Silicon Surface under Thermal Shock

In this paper, we examine the issues of the formation and propagation of melted zones during electric explosion of thin aluminum films on the oxidized silicon surface. A difference in the formation and propagation mechanisms of melted zones on the surface during the passage of a current pulse and af...

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Bibliographic Details
Published inTechnical physics letters Vol. 46; no. 4; pp. 374 - 377
Main Authors Skvortsov, A. A., Koryachko, M. V., Rybakova, M. R.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.04.2020
Springer Nature B.V
Subjects
Aluminum
Classical and Continuum Physics
Physics
Physics and Astronomy
Propagation
Silicon
Temperature gradients
Thermal shock
Thermoelasticity
Thin films
temperature gradient
semiconductor structure
electric explosion
thin films
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Summary:In this paper, we examine the issues of the formation and propagation of melted zones during electric explosion of thin aluminum films on the oxidized silicon surface. A difference in the formation and propagation mechanisms of melted zones on the surface during the passage of a current pulse and after it was switched off is found. After the current pulse is switched off, the migration of melted zones is revealed to be determined by the temperature gradient near a local heat source. The temperature gradients are obtained from the dimensional dependence of the displacement rate, and the thermoelasticity coefficient that determines the dynamics of zone migration in the temperature gradient field is estimated.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785020040276