Vapor-Phase Epitaxy of AlN Layers on AlN/Si(111) Templates Synthesized by Reactive Magnetron Sputtering

Epitaxial aluminum nitride (AlN) layers on Si(111) substrates have been grown by sequential application of several techniques including reactive magnetron sputter deposition to a thickness of 20 nm, metalorganic vapor-phase epitaxy (MOVPE) to a total thickness of 450 nm, and hydride vapor-phase epit...

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Published inTechnical physics letters Vol. 46; no. 4; pp. 382 - 384
Main Authors Bessolov, V. N., Gruzinov, N. D., Kompan, M. E., Konenkova, E. V., Panteleev, V. N., Rodin, S. N., Shcheglov, M. P.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.04.2020
Springer Nature B.V
Subjects
Aluminum nitride
Classical and Continuum Physics
Cracks
Epitaxy
Magnetron sputtering
Metalorganic chemical vapor deposition
Physics
Physics and Astronomy
Silicon substrates
Thickness
vapor-phase epitaxy
silicon
aluminum nitride
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Summary:Epitaxial aluminum nitride (AlN) layers on Si(111) substrates have been grown by sequential application of several techniques including reactive magnetron sputter deposition to a thickness of 20 nm, metalorganic vapor-phase epitaxy (MOVPE) to a total thickness of 450 nm, and hydride vapor-phase epitaxy (HVPE) to a final thickness of 2 μm. Synthesis of AlN layers by this combined method provides a significant decrease in the residual strain and suppresses the formation of cracks in the epilayer.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785020040185