Quantization of Electrical Conductance in Layered Zr/ZrO2/Au Memristive Structures

Anodic zirconia nanotubes are a promising functional medium for the formation of non-volatile resistive memory cells. The current–voltage characteristics in the region of low conductance of the fabricated Zr/ZrO 2 /Au memristive structures were studied in this work. For the first time, an analysis w...

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Published inDoklady. Physical chemistry (1991) Vol. 513; no. 1; pp. 176 - 180
Main Authors Vokhmintsev, A. S., Petrenyov, I. A., Kamalov, R. V., Karabanalov, M. S., Weinstein, I. A., Rempel, A. A.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.11.2023
Springer Nature B.V
Subjects
Chemistry
Chemistry and Materials Science
Circuits
Current voltage characteristics
Physical Chemistry
Zirconium dioxide
memristors
memristive behavior
conductance quantization
zirconia nanotubes
nanotubular metal dioxides
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Summary:Anodic zirconia nanotubes are a promising functional medium for the formation of non-volatile resistive memory cells. The current–voltage characteristics in the region of low conductance of the fabricated Zr/ZrO 2 /Au memristive structures were studied in this work. For the first time, an analysis was made of the reversible mechanisms of formation and destruction of single quantum conductors based on oxygen vacancies, which participate in processes of multiple resistive switching between low- and high-resistance states in the nanotubular dioxide layer. An equivalent electrical circuit of a parallel resistor connection was proposed and discussed to describe the observed memristive behavior of the studied layered structures.
ISSN:0012-5016
1608-3121
DOI:10.1134/S0012501623600262