Microstructure of Epitaxial GaN Layers Synthesized on Nanoprofiled Si(001) Substrates

• Published in: Crystallography reports Vol. 66; no. 4; pp. 682 - 686
• Main Authors: Myasoedov, A. V., Bert, N. A., Bessolov, V. N.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01.07.2021; Springer Nature B.V
• Subjects: Crystallography and Scattering Methods; Epitaxial layers; Gallium nitrides; Metalorganic chemical vapor deposition; Microstructure; Morphology; Orientation relationships; Physics; Physics and Astronomy; Silicon carbide; Silicon substrates; Surface and Thin Films; Surface layers; Vapor phase epitaxy; Vapor phases
• ISSN: 1063-7745; 1562-689X
• DOI: 10.1134/S1063774521040155

The microstructure of gallium nitride epitaxial layers synthesized by hydride vapor phase epitaxy (HVPE) and metalorganic chemical vapour deposition (MOCVD) on nanoprofiled NP‒Si(001) substrates with and without an intermediate 3 C ‑SiC layer has been investigated by transmission electron microscopy (TEM). It is found that the GaN layer obtained by HVPE on a combined NP–Si(001)/SiC substrate has a relatively smooth surface morphology and satisfies the orientation relationships and with the substrate. At the same time, the GaN layers obtained by MOCVD exhibit a rough surface morphology and a texture with preferred grain orientations on the nanoprofiled NP–Si(001) substrate with an angle of ∼4.5° between [111] Si and [0001] GaN and preferred orientations and on the combined NP–Si(001)/SiC substrate.