Low-Cost ITO/n-Si Solar Cells with Increased Sensitivity in UV Spectrum Range

The results regarding formation of ITO/c-Si junctions interface through the oxidation of the silicon wafer are described. Thus, the formation by this method of the thin layers with a thickness of about ~1 nm is demonstrated, which allows to obtain a photovoltaic conversion efficiency up to 15.3%. By...

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Bibliographic Details
Published inSurface engineering and applied electrochemistry Vol. 57; no. 3; pp. 315 - 322
Main Authors Simashkevich, A., Shevchenko, G., Bokshyts, Yu, Bruc, L., Caraman, M., Dementiev, I., Goglidze, T., Curmei, N., Serban, D.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.05.2021
Springer Nature B.V
Subjects
Engineering
Machines
Manufacturing
Oxidation
Photovoltaic cells
Photovoltaic conversion
Processes
Sensitivity
Silicon
Silicon wafers
Solar cells
Thickness
Thin films
Ultraviolet radiation
junction
UV
silicon
luminescence
ITO
composite
sensitivity
interface
wafers
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Summary:The results regarding formation of ITO/c-Si junctions interface through the oxidation of the silicon wafer are described. Thus, the formation by this method of the thin layers with a thickness of about ~1 nm is demonstrated, which allows to obtain a photovoltaic conversion efficiency up to 15.3%. By depositing the luminescent layer on the front side of the ITO/c-Si junctions, which is active in the region of the solar cells sensitivity to the action of UV irradiation, their functionality in the range of 300–1100 nm of the solar spectrum is demonstrated.
ISSN:1068-3755
1934-8002
DOI:10.3103/S1068375521030133