Effects of Oxygen Concentration in Monocrystalline Silicon on Reverse Leakage Current of PIN Rectifier Diodes

The effects of initial oxygen concentration on the reverse leakage current of PIN rectifier diodes were studied. We fabricated the PIN rectifier diodes with different initial oxygen concentrations, and analyzed the electrical properties, anisotropic preferred etching by means of optical microscopy,...

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Bibliographic Details
Published inJournal of Wuhan University of Technology. Materials science edition Vol. 36; no. 4; pp. 472 - 477
Main Authors Sun, Xinli, Guo, Hui, Zhang, Yuming, Guo, Bingjian, Li, Xingpeng, Cao, Zhen
Format Journal Article
LanguageEnglish
Published Wuhan Wuhan University of Technology 01.08.2021
Springer Nature B.V
Subjects
Advanced Materials
Chemistry and Materials Science
Diodes
Electrical properties
Fourier transforms
High temperature
Leakage current
Materials Science
Microscopy
Nucleation
Optical microscopy
Optical properties
Oxidation
Oxygen
Rectifiers
Stacking faults
induced defect
oxygen concentration
PIN rectifier diode
reverse leakage current
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Summary:The effects of initial oxygen concentration on the reverse leakage current of PIN rectifier diodes were studied. We fabricated the PIN rectifier diodes with different initial oxygen concentrations, and analyzed the electrical properties, anisotropic preferred etching by means of optical microscopy, Fourier transform infrared spectroscopy and transmission electron microscopy. It is pointed out that the reverse leakage current increases exponentially with the increasing initial oxygen concentration. Furtherly, we researched and analyzed the mechanism of the effects of initial oxygen concentration on the reverse leakage current of PIN rectifier diode. It is shown that the oxygen precipitations present in an “S” curve with increasing initial oxygen concentration after high temperature diffusion. The main reason is that the nucleation and growth of oxygen precipitation at high temperature induce bulk oxidation-induced defects (B-OSF), which are mainly dislocations, and a small amount of rod stacking faults. The density of B-OSF increases with the increasing initial oxygen concentration. The existence of B-OSF has great effects on the reverse leakage current of PIN rectifier diode.
ISSN:1000-2413
1993-0437
DOI:10.1007/s11595-021-2432-8