Synthesis of Thin Single-Crystalline α-Cr2O3 Layers on Sapphire Substrates by Ultrasonic-Assisted Chemical Vapor Deposition

Single-crystalline α-Cr 2 O 3 layers were synthesized on a sapphire substrate with a basal orientation in a laboratory reactor using ultrasonic-assisted chemical vapor deposition in the temperature range of 700–850°C. The influence of the growth temperature on the structural quality of the layer was...

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Bibliographic Details
Published inTechnical physics letters Vol. 49; no. Suppl 3; pp. S284 - S287
Main Authors Nikolaev, V. I., Timashov, R. B., Stepanov, A. I., Stepanov, S. I., Chikiryaka, A. V., Shcheglov, M. P., Polyakov, A. Ya
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.12.2023
Springer Nature B.V
Subjects
Chemical vapor deposition
Chromium oxides
Classical and Continuum Physics
Light transmission
Physics
Physics and Astronomy
Sapphire
Single crystals
Substrates
Thickness
Thin films
wide-bandgap semiconductor
chromium oxide
CVD epitaxy
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Summary:Single-crystalline α-Cr 2 O 3 layers were synthesized on a sapphire substrate with a basal orientation in a laboratory reactor using ultrasonic-assisted chemical vapor deposition in the temperature range of 700–850°C. The influence of the growth temperature on the structural quality of the layer was studied by X-ray diffraction. At a growth temperature of 800°C, continuous layers with a thickness of about 1 μm were obtained. The layers were transparent in the visible region with a slightly greenish tint and showed some light transmission up to wavelengths of ~350 nm. The full width at half maximum of the rocking curve for reflection 0006 was ~300 arcsec.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785023010273