Polarization Processes in Thin Layers of Amorphous MoS2 Obtained by RF Magnetron Sputtering

The polarization processes in thin layers of amorphous molybdenum disulfide MoS 2 are studied by dielectric spectroscopy techniques. The process of dipole-relaxation polarization is observed. The microscopic parameters of the system are calculated, and the relaxation time of the dipole-polarization...

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Published inSemiconductors (Woodbury, N.Y.) Vol. 54; no. 5; pp. 558 - 562
Main Authors Kononov, A. A., Castro-Arata, R. A., Glavnaya, D. D., Stozharov, V. M., Dolginsev, D. M., Saito, Y., Fons, P., Anisimova, N. I., Kolobov, A. V.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.05.2020
Springer Nature B.V
Subjects
Activation energy
Amorphous
Charge transport
Dielectric relaxation
Dipoles
Magnetic Materials
Magnetism
Magnetron sputtering
Molybdenum disulfide
Organic Semiconductors
Physics
Physics and Astronomy
Polarization
Relaxation time
Thin films
Vitreous
transition-metal dichalcogenides
molybdenum disulfide
transport processes
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Summary:The polarization processes in thin layers of amorphous molybdenum disulfide MoS 2 are studied by dielectric spectroscopy techniques. The process of dipole-relaxation polarization is observed. The microscopic parameters of the system are calculated, and the relaxation time of the dipole-polarization process, as well as the activation energies E a and E σ of the relaxation process and conductivity, respectively, are determined. The fact that the two activation energies are close to each other suggests that the processes of relaxation and charge transport are driven by the same mechanism.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782620050073