Cryo Plasma Etching of Porous Low-k Dielectrics

Non-destructive plasma etching processes for dielectrics with ultra-low dielectric constant are relevant for forming metallization systems of integrated circuits with a design rule of less than 28 nm. The paper demonstrates the process of atomic layer etching of dielectrics with ultralow permittivit...

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Bibliographic Details
Published inHigh energy chemistry Vol. 57; no. Suppl 1; pp. S115 - S118
Main Authors Miakonkikh, A. V., Kuzmenko, V. O., Rudenko, K. V.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.10.2023
Springer Nature B.V
Subjects
Chemistry
Chemistry and Materials Science
Circuit design
Cryogenic temperature
Integrated circuits
Metallizing
Permittivity
Physical Chemistry
Plasma etching
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Summary:Non-destructive plasma etching processes for dielectrics with ultra-low dielectric constant are relevant for forming metallization systems of integrated circuits with a design rule of less than 28 nm. The paper demonstrates the process of atomic layer etching of dielectrics with ultralow permittivity. The process is based on the adsorption of C 4 F 8 gas in the pores of the film in the first stage of the cycle at cryogenic temperatures (up to – 120°C) and activation of the reaction by bombardment with accelerated particles in the second stage. The proposed process is promising because the gas condensed on the surface of the pores protects their walls from chemical degradation.
ISSN:0018-1439
1608-3148
DOI:10.1134/S0018143923070275