Visible luminescence enhancement methods in SiGe/Si heterostructures

The possibility of increasing the photoluminescence signal of Si1−xGex/Si quantum wells in the visible spectral range due to a change in the conduction band structure and the interaction of many-body states with plasma oscillations of metal nanoparticles is studied. The sample band structure was con...

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Bibliographic Details
Published inBulletin of the Lebedev Physics Institute Vol. 44; no. 12; pp. 371 - 373
Main Authors Nikolaev, S. N., Krivobok, V. S., Bagaev, V. S., Onishchenko, E. E.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.12.2017
Springer Nature B.V
Subjects
Band structure
Band structure of solids
Conduction bands
Heterostructures
Luminescence
Nanoparticles
Photoluminescence
Physics
Physics and Astronomy
Plasma oscillations
Quantum wells
Silicon germanides
Thickness
2
luminescence
Si
quantum wells
deformation
metal nanoparticles
Ge
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Summary:The possibility of increasing the photoluminescence signal of Si1−xGex/Si quantum wells in the visible spectral range due to a change in the conduction band structure and the interaction of many-body states with plasma oscillations of metal nanoparticles is studied. The sample band structure was controlled using a uniaxial strain of ∼10−4. It is found that such an approach allows an increase in the emission intensity of biexcitons in the quantum well (x = 9%) by a factor of 2.4 at a temperature of 5 K. Metal nanoparticles deposited on the sample surface with a protective layer thickness of 20 nm allowed us to increase the luminescence intensity of quantum wells approximately by a factor of 2.7.
ISSN:1068-3356
1934-838X
DOI:10.3103/S1068335617120077