Design of full-duplex and multifunction bidirectional CMOS transceiver for optical interconnect applications

• Published in: Optical and quantum electronics Vol. 49; no. 7; pp. 1 - 14
• Main Authors: Ukaegbu, Ikechi Augustine, Rakib Uddin, M., Sangirov, Jamshid, Nguyen, Nga T. H., Lee, Tae-Woo, Cho, Mu Hee, Park, Hyo-Hoon
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.07.2017; Springer Nature B.V
• Subjects: Amplification; Characterization and Evaluation of Materials; Circuits; CMOS; Computer Communication Networks; Duplex operation; Electrical Engineering; Gain; Lasers; Optical Devices; Optics; Optoelectronics; Photonics; Physics; Physics and Astronomy; Power consumption; Transceivers; Transmitters; Switch; Transmitter; Hybrid; Optoelectronic; Receiver; Transceiver; Evaluation PCB
• ISSN: 0306-8919; 1572-817X
• DOI: 10.1007/s11082-017-1078-4

This work presents a full-duplex and multifunction bidirectional transceiver for optical interconnect application. The transceiver utilizes a common limiting amplifier/gain stage, thus reducing total chip area and total power consumption. While providing a full-duplex bidirectional transmission with the aid of a hybrid circuit between the electrical input/output (I/O) and the optoelectronic signals from the transmitter and receiver circuits, it also allows for a half-duplex operation with the aid of a switch between the transimpedance amplifier signals and the transmitter electrical input from the I/O port. The multifunction bidirectional CMOS transceiver is designed in a 0.13 µm Si-CMOS technology, with power dissipation of 79 and 54.4 mW for the transmitter and receiver, respectively. It shows a 3-dB bandwidth of 5.58 and 5.69 GHz for the transmitter and the receiver respectively and with a 3-dB gain of 66.14 and 69.6 dB, in full-duplex mode. The transceiver operates up to 7 Gb/s in full-duplex mode.