Hydrogen Influence on Electrical and Photoelectrical Properties of InP/Pd Thin-Film Structures Obtained by Sol-Gel Method

the current-voltage characteristics and photoelectric properties of semiconductor structures containing Pd nanoparticles in thin films synthesized by the sol-gel method on an n -InP substrate have been investigated. The experimental results show that in presence of hydrogen the cut-off voltage chang...

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Bibliographic Details
Published inTechnical physics letters Vol. 49; no. Suppl 4; pp. S307 - S310
Main Authors Grebenshchikova, E. A., Shutaev, V. A., Matveev, V. A., Gubanova, N. N., Shilova, O. A., Yakovlev, Yu. P.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.12.2023
Springer Nature B.V
Subjects
Chemical sensors
Classical and Continuum Physics
Current voltage characteristics
Hydrogen
Indium phosphides
Photoelectric effect
Photoelectricity
Physics
Physics and Astronomy
Schottky diodes
Sol-gel processes
Substrates
Thin films
hydrogen sensor
Pd nanoparticles
Schottky dio de
hydrogen
sol-gel method
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Summary:the current-voltage characteristics and photoelectric properties of semiconductor structures containing Pd nanoparticles in thin films synthesized by the sol-gel method on an n -InP substrate have been investigated. The experimental results show that in presence of hydrogen the cut-off voltage changes. The photovoltage and photocurrent upon illumination of the structure with an LED (λ = 0 . 9 µm) and pulsed exposure to hydrogen change, that was observed earlier for hydrogen-sensitive Pd/ n -InP Schottky diodes. The prospects of using the structures under study as a sensitive element for hydrogen sensor are discussed.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785023010157