InGaAsP/InP Photovoltaic Converters for Narrowband Radiation

Utilizing performed research, photoelectric converters of narrow-band radiation (λ ≈ 1.0–1.3 μm) based on InGaAsP/InP heterostructures with an epitaxial p–n junction have been developed and created. Technological regimes that apply of for creating high-quality layers of quaternary InGaAsP solid solu...

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Bibliographic Details
Published inSemiconductors (Woodbury, N.Y.) Vol. 57; no. 13; pp. 611 - 614
Main Authors Potapovich, N. S., Nakhimovich, M. V., Khvostikov, V. P.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.12.2023
Springer Nature B.V
Subjects
Gallium indium arsenide phosphide
Heterostructures
Indium phosphides
Liquid phase epitaxy
Liquid phases
Magnetic Materials
Magnetism
Narrowband
P-n junctions
Photoelectricity
Physics
Physics and Astronomy
Solid solutions
LPE
InP
heterostructures
narrowband radiation
InGaAsP
photovoltaic converters
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Summary:Utilizing performed research, photoelectric converters of narrow-band radiation (λ ≈ 1.0–1.3 μm) based on InGaAsP/InP heterostructures with an epitaxial p–n junction have been developed and created. Technological regimes that apply of for creating high-quality layers of quaternary InGaAsP solid solutions isoperiodic to indium phosphide in a wide range of compositions by liquid-phase epitaxy have been determined.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782623090142