Effects of Temperature in CNTFET-Based Design of Analog Circuits

In this paper we simulate the effects of temperature in CNTFET- based design of analog circuits, enhancing a semi-empirical model of CNTFET, already proposed by us, in which the temperature variation in the drain current equation and in energy bandgap is considered in order to estimate the change in...

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Bibliographic Details
Published inECS journal of solid state science and technology Vol. 7; no. 2; pp. M16 - M21
Main Authors Gelao, G., Marani, R., Perri, A. G.
Format Journal Article
LanguageEnglish
Published The Electrochemical Society 01.01.2018
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Summary:In this paper we simulate the effects of temperature in CNTFET- based design of analog circuits, enhancing a semi-empirical model of CNTFET, already proposed by us, in which the temperature variation in the drain current equation and in energy bandgap is considered in order to estimate the change in static and dynamic conditions. A short description of the model used to reproduce the I-V characteristics of the device, at different temperatures, is given. Then the effects of thermal variations in the design of a phase shift oscillator, a cascode current sink mirror and an operational trans-conductance amplifier, are illustrated and widely discussed.
Bibliography:0031803JSS
ISSN:2162-8769
2162-8769
2162-8777
DOI:10.1149/2.0031803jss