Transport anisotropy in microcrystalline silicon studied by measurement of ambipolar diffusion length

• Published in: Journal of applied physics Vol. 89; no. 3; pp. 1800 - 1805
• Main Authors: Švrček, V., Pelant, I., Kočka, J., Fojtı́k, P., Rezek, B., Stuchlı́ková, H., Fejfar, A., Stuchlı́k, J., Poruba, A., Toušek, J.
• Format: Journal Article
• Language: English
• Published: 01.02.2001
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.1338996

We have studied charge transport anisotropy in microcrystalline silicon (μc-Si:H) by comparing diffusion length measured parallel to the substrate by steady stage photocarrier grating and perpendicular to the substrate by surface photovoltage method (SPV). We have developed a SPV evaluation procedure which allowed us to exclude the effect of light scattering at the naturally rough surface of the μc-Si:H. The procedure allows us to deduce not only the diffusion length, but also the depth of the depletion layer at the surface and recombination coefficients at both top and bottom interfaces of the film. With growing μc-Si:H film thickness the size of the crystallites increases, leading to higher roughness and thus also light scattering. At the same time density of grain boundaries decreases, resulting in an increase of the diffusion length and of the surface depletion layer depth. For all samples the diffusion length perpendicular to the substrate was several times higher than the diffusion length parallel to it, clearly confirming previous indication of the transport anisotropy resulting from the measurements of coplanar and sandwich conductivity.