Communication-Direct Imaging of Irradiation Damage in Semiconductors by Low-Energy SEM

The performance of the present-day Scanning Electron Microscopy (SEM) extends far beyond delivering electronic images of the surface topography. One of the most noticeable achievements of the technique was recognition of p- and n-type conductive channels on the semiconductor surface. Here, we report...

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Bibliographic Details
Published inECS journal of solid state science and technology Vol. 6; no. 7; pp. P415 - P417
Main Authors Jóźwik, Iwona, Dąbrowska, Elżbieta, Maląg, Andrzej, Barcz, Adam
Format Journal Article
LanguageEnglish
Published The Electrochemical Society 01.01.2017
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Summary:The performance of the present-day Scanning Electron Microscopy (SEM) extends far beyond delivering electronic images of the surface topography. One of the most noticeable achievements of the technique was recognition of p- and n-type conductive channels on the semiconductor surface. Here, we report on the possibility of visualization of highly resistive layers produced by ion irradiation. The presented high-resolution imaging of damage-induced insulating layers was made possible through application of low energy of the primary beam (1 keV), optimization of the instrument parameters and effective separation of the so-called SE1 vs. SE2 secondary electrons.
Bibliography:0191707JSS
ISSN:2162-8769
2162-8769
2162-8777
DOI:10.1149/2.0191707jss