Electronic Structure of Ultrathin Cs/Bi2Se3 Interfaces

The electronic structure of ultrathin Cs/Bi 2 Se 3 interfaces has been studied by photo electron spectroscopy using synchrotron radiation. The experiments were carried out in situ in ultrahigh vacuum with submonolayer Cs coverages on Bi 2 Se 3 samples. It was found that the adsorption of Cs causes c...

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Bibliographic Details
Published inTechnical physics letters Vol. 49; no. Suppl 4; pp. S303 - S306
Main Authors Benemanskaya, G. V., Timoshnev, S. N.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.12.2023
Springer Nature B.V
Subjects
Adsorption
Classical and Continuum Physics
Electronic structure
Physics
Physics and Astronomy
Surface chemistry
Surface layers
Synchrotron radiation
Ultrahigh vacuum
Valence band
photoelectron spectroscopy
topological insulators
ultrathin interfaces
electronic structure
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Summary:The electronic structure of ultrathin Cs/Bi 2 Se 3 interfaces has been studied by photo electron spectroscopy using synchrotron radiation. The experiments were carried out in situ in ultrahigh vacuum with submonolayer Cs coverages on Bi 2 Se 3 samples. It was found that the adsorption of Cs causes changes in the core level spectra of Bi 4 f , Bi 5 d , Se 3 d . It has been established that Cs atoms are adsorbed predominantly on Bi atoms in the upper surface layer. The states of the valence band were studied for a clean Bi 2 Se 3 surface and for the Cs/Bi 2 Se 3 interface. Near the Fermi level, 2D topological states have been found. Two induced surface states appear in the region of the valence band upon adsorption of Cs.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785023010108