Effect of Laser Exposure on the Process of Silicon Nanoparticle Fabrication
Silicon nanoparticles are obtained by nanosecond laser ablation of a single-crystal wafer under a deionized water layer. Nanoparticle generation mechanisms are studied depending on the incident energy density of laser radiation (7–12 J/cm 2 ) and scanning speed (10–750 mm/s). At a scanning speed of...
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Published in | Bulletin of the Lebedev Physics Institute Vol. 45; no. 11; pp. 353 - 355 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Moscow
Pleiades Publishing
01.11.2018
Springer Nature B.V |
Subjects | |
Online Access | Get full text |
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Summary: | Silicon nanoparticles are obtained by nanosecond laser ablation of a single-crystal wafer under a deionized water layer. Nanoparticle generation mechanisms are studied depending on the incident energy density of laser radiation (7–12 J/cm
2
) and scanning speed (10–750 mm/s). At a scanning speed of 150–200 mm/s, a maximum of the extinction coefficient of obtained colloidal solutions of nanoparticles is observed, which can be caused by an increase in their mass yield. |
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ISSN: | 1068-3356 1934-838X |
DOI: | 10.3103/S1068335618110076 |