Effect of Laser Exposure on the Process of Silicon Nanoparticle Fabrication

Silicon nanoparticles are obtained by nanosecond laser ablation of a single-crystal wafer under a deionized water layer. Nanoparticle generation mechanisms are studied depending on the incident energy density of laser radiation (7–12 J/cm 2 ) and scanning speed (10–750 mm/s). At a scanning speed of...

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Bibliographic Details
Published inBulletin of the Lebedev Physics Institute Vol. 45; no. 11; pp. 353 - 355
Main Authors Saraeva, I. N., Ivanova, A. K., Kudryashov, S. I., Nastulyavichus, A. A.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.11.2018
Springer Nature B.V
Subjects
Deionization
Flux density
Laser ablation
Lasers
Nanoparticles
Physics
Physics and Astronomy
Scanning
Silicon
Single crystals
silicon nanoparticles
laser ablation
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Summary:Silicon nanoparticles are obtained by nanosecond laser ablation of a single-crystal wafer under a deionized water layer. Nanoparticle generation mechanisms are studied depending on the incident energy density of laser radiation (7–12 J/cm 2 ) and scanning speed (10–750 mm/s). At a scanning speed of 150–200 mm/s, a maximum of the extinction coefficient of obtained colloidal solutions of nanoparticles is observed, which can be caused by an increase in their mass yield.
ISSN:1068-3356
1934-838X
DOI:10.3103/S1068335618110076