Anisotropy of electrical resistivity in PVT grown WSe2−x crystals

Single crystals of p-type WSe 2 and WSe 1.9 were grown by a physical vapour transport technique. The anisotropy in d.c. electrical resistivity was investigated in these grown crystals. The off-stoichiometric WSe 1.9 exhibited a higher anisotropy ratio as compared to WSe 2 crystals. The electron micr...

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Bibliographic Details
Published inIndian journal of physics Vol. 92; no. 5; pp. 615 - 618
Main Authors Solanki, G. K., Patel, Y. A., Agarwal, M. K.
Format Journal Article
LanguageEnglish
Published New Delhi Springer India 01.05.2018
Springer Nature B.V
Subjects
Anisotropy
Astrophysics and Astroparticles
Crystal defects
Crystal growth
Crystals
Electrical resistivity
Original Paper
Physics
Physics and Astronomy
Single crystals
Crystal growth
65.40.-b
Electron microscopy
Anisotropy
Activation energy
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Summary:Single crystals of p-type WSe 2 and WSe 1.9 were grown by a physical vapour transport technique. The anisotropy in d.c. electrical resistivity was investigated in these grown crystals. The off-stoichiometric WSe 1.9 exhibited a higher anisotropy ratio as compared to WSe 2 crystals. The electron microscopic examination revealed the presence of a large number of stacking faults in these crystals. The resistivity enhancement along the c-axis and anisotropic effective mass ratio explained on the basis of structural disorder introduced due to off-stoichiometry.
ISSN:0973-1458
0974-9845
DOI:10.1007/s12648-017-1141-9